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| BLF6G22-45 Power LDMOS transistor Rev. 02 -- 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 18.5 D (%) 13 ACPR (dBc) -49[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: N Average output power = 2.5 W N Power gain = 18.5 dB (typ) N Efficiency = 13 % N ACPR = -49 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) NXP Semiconductors BLF6G22-45 Power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 Graphic symbol 1 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G22-45 Description flanged ceramic package; 2 mounting holes; 2 leads Version SOT608A Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 +150 225 Unit V V C C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 12.5 W (CW) Typ 1.7 Unit K/W BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 2 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 72 mA VDS = 28 V; ID = 300 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 3.5 A VGS = VGS(th) + 3.75 V; ID = 2.5 A Min 65 1.4 1.65 Typ 1.9 2.15 12.5 5 0.2 Max 2.4 2.65 1.5 150 Unit V V V A A nA S 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1 to 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 405 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol PL(AV) Gp D ACPR Parameter average output power power gain drain efficiency adjacent channel power ratio PL(AV) = 2.5 W PL(AV) = 2.5 W PL(AV) = 2.5 W Conditions Min 17.3 10.5 Typ 2.5 18.5 13 -49 Max 19.7 -46 Unit W dB % dBc 7.1 Ruggedness in class-AB operation The BLF6G22-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 405 mA; PL = 45 W (CW); f = 2170 MHz. BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 3 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 22 Gp (dB) 20 001aah604 60 D (%) 50 D 18 Gp 16 40 30 14 20 12 0 10 20 30 40 10 50 60 PL (W) VDS = 28 V; IDq = 405 mA; f = 2170 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 20 Gp (dB) 19 001aah605 Gp 60 D (%) 50 -10 IMD (dBc) -20 001aah606 IMD3 18 40 -30 IMD5 17 D 30 -40 IMD7 16 20 -50 -60 15 10 14 0 10 20 30 40 50 70 PL(PEP) (W) 60 0 -70 0 10 20 30 40 50 60 70 PL(PEP) (W) VDS = 28 V; IDq = 405 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. VDS = 28 V; IDq = 405 mA; f1 = 2170 MHz; f2 = 2170.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 4 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 20 Gp (dB) 19 D Gp 18 001aah607 30 D (%) 25 -30 ACPR (dBc) -35 001aah608 -40 20 -45 17 15 -50 16 10 -55 15 0 2 4 6 5 8 10 PL(AV) (W) -60 0 2 4 6 8 10 PL(AV) (W) VDS = 28 V; IDq = 405 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. VDS = 28 V; IDq = 405 mA; f1 = 2162.5 MHz; f2 = 2167.5 MHz; carrier spacing 5 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values 8. Test information VGG C4 C3 C5 R1 C2 C18 C6 C10 C11 C12 C13 C14 C15 C16 VDD input 50 C1 C7 C8 C9 C17 output 50 001aah609 See Table 8 for list of components. Fig 6. Test circuit for operation at 2110 MHz and 2170 MHz BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 5 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor C16 C3 C15 C4 C6 R1 C10 C11 C12 C13 C2 C7 C1 C8 C9 C17 C18 C14 C5 001aah610 Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) with r = 2.2 and thickness = 0.79 mm. See Table 8 for list of components. Fig 7. Component layout for 2110 MHz and 2170 MHz test circuit Table 8. List of components For test circuit, see Figure 6 and Figure 7. Component C1, C2, C17, C18 C3, C15 C4, C5 C6, C12 C7 C8 C9 C10, C11 C13 C14 C16 R1 [1] [2] Description multilayer ceramic chip capacitor tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor chip resistor Value 6.8 pF 10 F 1.5 F 10 pF 0.5 pF 1.2 pF 1.0 pF 100 nF 220 nF 4.7 F 220 F, 63 V 5.6 [2] [2] [2] [2] [1] Remarks American technical ceramics type 100A or capacitor of same quality. American technical ceramics type 100B or capacitor of same quality. BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 6 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 q C B c 1 H U2 p E1 E w1 M A M B M A b 2 w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.62 3.76 0.182 0.148 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 p 3.30 2.92 0.130 0.115 Q 1.70 1.35 q 15.24 U1 20.45 20.19 0.805 0.795 U2 9.91 9.65 w1 0.25 w2 0.51 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 10.21 10.29 10.01 10.03 0.402 0.405 0.394 0.395 0.285 0.006 0.275 0.004 0.045 0.620 0.035 0.580 0.067 0.600 0.053 0.390 0.010 0.020 0.380 OUTLINE VERSION SOT608A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 Fig 8. BLF6G22-45_2 Package outline SOT608A (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 7 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH IMD LDMOS PAR PDPCH RF VSWR W-CDMA Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Waveform Dedicated Physical CHannel InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date Data sheet status 20080421 Product data sheet Change notice Supersedes BLF6G22-45_BLF6G22S-45_1 Document ID BLF6G22-45_2 Modifications: * * The combined data sheet is split up into two separate data sheets. Table 1 and Table 7: ACPR values changed. Preliminary data sheet - BLF6G22-45_BLF6G22S-45_1 20080219 BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 8 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G22-45_2 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 -- 21 April 2008 9 of 10 NXP Semiconductors BLF6G22-45 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 April 2008 Document identifier: BLF6G22-45_2 |
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